[test_rom] Add .static_critical section for consistency with silicon_creator code
Signed-off-by: Alphan Ulusoy <alphan@google.com>
diff --git a/sw/device/lib/testing/test_rom/BUILD b/sw/device/lib/testing/test_rom/BUILD
index bea9ccc..8f59bbd 100644
--- a/sw/device/lib/testing/test_rom/BUILD
+++ b/sw/device/lib/testing/test_rom/BUILD
@@ -21,6 +21,7 @@
deps = [
"//hw/top_earlgrey/sw/autogen:top_earlgrey_memory",
"//sw/device:info_sections",
+ "//sw/device/silicon_creator/lib/base:static_critical_sections",
],
)
@@ -145,6 +146,9 @@
"//sw/device/lib/testing:pinmux_testutils",
"//sw/device/lib/testing/test_framework:check",
"//sw/device/lib/testing/test_framework:status",
+ "//sw/device/silicon_creator/lib/base:sec_mmio",
+ "//sw/device/silicon_creator/lib/base:static_critical_boot_measurements",
+ "//sw/device/silicon_creator/lib/base:static_critical_sec_mmio",
"//sw/device/silicon_creator/lib/drivers:retention_sram",
],
)
diff --git a/sw/device/lib/testing/test_rom/test_rom.c b/sw/device/lib/testing/test_rom/test_rom.c
index 7a21aae..f2e823e 100644
--- a/sw/device/lib/testing/test_rom/test_rom.c
+++ b/sw/device/lib/testing/test_rom/test_rom.c
@@ -20,6 +20,7 @@
#include "sw/device/lib/testing/test_framework/check.h"
#include "sw/device/lib/testing/test_framework/status.h"
#include "sw/device/lib/testing/test_rom/chip_info.h" // Generated.
+#include "sw/device/silicon_creator/lib/base/sec_mmio.h"
#include "sw/device/silicon_creator/lib/drivers/retention_sram.h"
#include "sw/device/silicon_creator/lib/manifest.h"
#include "sw/device/silicon_creator/rom/bootstrap.h"
@@ -55,6 +56,9 @@
// rom tests. By default, it simply jumps into the OTTF's flash.
OT_WEAK
bool rom_test_main(void) {
+ // Initial sec_mmio, required by bootstrap and its dependencies.
+ sec_mmio_init();
+
// Configure the pinmux.
CHECK_DIF_OK(dif_pinmux_init(
mmio_region_from_addr(TOP_EARLGREY_PINMUX_AON_BASE_ADDR), &pinmux));
diff --git a/sw/device/lib/testing/test_rom/test_rom.ld b/sw/device/lib/testing/test_rom/test_rom.ld
index 1e0ec30..c8c38b4 100644
--- a/sw/device/lib/testing/test_rom/test_rom.ld
+++ b/sw/device/lib/testing/test_rom/test_rom.ld
@@ -24,7 +24,7 @@
_boot_address = ORIGIN(rom);
_heap_size = 0xe000;
-_stack_size = LENGTH(ram_main) - _heap_size;
+_stack_size = LENGTH(ram_main) - _heap_size - _static_critical_size;
_stack_end = ORIGIN(ram_main) + LENGTH(ram_main);
_stack_start = _stack_end - _stack_size;
_flash_start = ORIGIN(eflash);
@@ -100,19 +100,24 @@
} > rom
/**
- * "Intitial data" section, the initial values of the mutable data section
- * initialized at runtime.
+ * Critical static data that is accessible by both the ROM and the ROM
+ * extension.
*/
- .idata : ALIGN(4) {
- _data_init_start = .;
- } > rom
+ INCLUDE sw/device/silicon_creator/lib/base/static_critical.ld
/**
* Standard mutable data section, at the bottom of RAM. This will be
* initialized from the .idata section at runtime by the CRT.
*/
- .data ORIGIN(ram_main): AT(_data_init_start) ALIGN(4) {
+ .data : ALIGN(4) {
_data_start = .;
+ _data_init_start = LOADADDR(.data);
+
+ /* This will get loaded into `gp`, and the linker will use that register for
+ * accessing data within [-2048,2047] of `__global_pointer$`.
+ *
+ * This is much cheaper (for small data) than materializing the
+ * address and loading from that (which will take one extra instruction). */
__global_pointer$ = . + 2048;
/* Small data should come before larger data. This helps to ensure small
@@ -126,9 +131,16 @@
*/
*(.data)
*(.data.*)
+
+ /* Ensure section end is word-aligned. */
. = ALIGN(4);
_data_end = .;
- } > ram_main
+ _data_init_end = LOADADDR(.data) + SIZEOF(.data);
+
+ /* This puts it in ram_main at runtime (for the VMA), but puts the section
+ * into rom for load time (for the LMA). This is why `_data_init_*` uses
+ * `LOADADDR`. */
+ } > ram_main AT> rom
/**
* Immutable chip_info data, containing build-time-recorded information.
